Speed-Up wafer-level Magnetic Test

Speed-Up Development of Integrated Magnetic Devices

Hprobe wafer-level tester fasten development and production of magnetic devices with its full features to characterize, control and monitor magnetic films embedded in test structure or patterned devices.

Improve Yields of MRAM Manufacturing Process

With Hprobe 3D magnetic generator, high field sweep in the perpendicular direction is applied on the device to evaluate the STT-MRAM using pre-implemented electrical tests. The control of the memory unit cells could be done directly after patterning the magnetic tunnel junction (MTJ) stack.

Enhance Sorting Performances of Magnetic Sensors

On Hprobe wafer tester, the 3D generator provides high rotating field speed with accurate angle and amplitude control. This helps in increasing the wafer throughput during parametric and final testing, and allow to increase the test coverage.

MRAM test

Magnetic sensor test

A unique patented technology

Hprobe offers a unique patented technology of multidimensional magnetic field generator for magnetic devices and sensors wafer level characterization and testing. Current product line includes dedicated tools for characterization and testing of MRAM (STT, SOT, VCMA) and Magnetic Sensors (TMR, GMR, etc.) in all phases of the magnetic technology development.

Press releases

Hprobe and HTSi Sign Sales and Service Agreement for Taiwan and Singapore

Announcement follows new qualification of Hprobe tester in Taiwan by a major semiconductor foundry Taipei, Taiwan, September 17, 2019 – Hprobe, a...

Hprobe’s Vote for MRAM

The Memory Guy | Jim Handy | October 18, 2019 Hprobe: a test equipment manufacturer based in Grenoble France, has cast its vote for MRAM to succeed...

TSMC to present 5nm CMOS, 22nm STT-MRAM at IEDM

EE News | Peter Clarke | October 15, 2019 Leading foundry Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) has at least two significant papers at...

Hprobe will be exhibiting at IEDM 2019 (December 7-11, 2019 Hilton San Francisco Union Square), in Booth #18 with North American Nanotech, Inc. (NANI)

Hprobe will feature the IBEX 200/300 wafer level magnetic tester, with a 3D magnetic generator designed to test Magnetic Tunnel Junctions (MTJ) of Spin Transfer Torque (STT) and Spin-orbit Torque (SOT) Magnetic Random Access Memory (MRAM) devices in under one (1) second.

Hprobe’s 3D magnetic-head delivers unlimited selection magnetic field dynamic vectors with accuracy better than a few tens of a millitesla (mT).

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A Global Presence

The company is headquartered near Grenoble, France, at the heart of the French Silicon Valley. This location strategically positions the company in one of Europe’s key semiconductor research and manufacturing hubs.
We supply our products worldwide through this location, supported by a number of country agents and distributors. If we cover Europe and a couple of other regions still directly from France, we have a worldwide sales network with one agent in the U.S., and one agent and a distributor covering for China, as well as Taiwan and Singapore. As global demand for our products grow, we intend to expand and strengthen our global reach by establishing sales and customer support in other key strategic regions.

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