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Challenges In Making And Testing STT-MRAM

May 7, 2019 | Hprobe in the news

Semiconductor Engineering | Mark Lapedus | May 7, 2019

Several chipmakers are ramping up a next-generation memory type called STT-MRAM, but there are still an assortment of manufacturing and test challenges for current and future devices.

STT-MRAM, or spin-transfer torque MRAM, is attractive and gaining steam because it combines the attributes of several conventional memory types in a single device. In the works for years, STT-MRAM features the speed of SRAM and the non-volatility of flash with unlimited endurance. STT-MRAM uses the magnetism of electron spin to provide non-volatile properties in chips.