EE Times | Dylan McGrath | February 20, 2019
Intel further described its technique for embedding spin-transfer torque-MRAM into devices using its 22-nm FinFET process, pronouncing the technology ready for high-volume manufacturing.
Intel further described its technique for embedding spin-transfer torque-MRAM into devices using its 22-nm FinFET process, pronouncing the technology ready for high-volume manufacturing.