CTIMES | By Siamak Salimy | Jun 02, 2021
Because STT-MRAM (Magnetic Random-Access Memory) is fast, non-volatile, durable, low power and scalable, it is one of the new memory technologies fast gaining traction today. It is a strong candidate to replace eFlash, and is especially attractive for automotive, IoT and other low-power applications. However, to support the high yields needed for volume manufacturing, it requires new approaches to testing.