By Sebastien COUET & Gouri Sankar Kar | February 7, 2023
Today, three main issues challenge the use of spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices in last-level cache memory applications: scalability, dynamic power consumption and the need for a manufacturable compact field-free switching solution. At IEDM 2022, imec presented an SOT-MRAM architecture that addresses these issues in one go.